KMID : 1151820140080070383
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Journal of the Korean Society of Radiology 2014 Volume.8 No. 7 p.383 ~ p.387
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The Fabrication and Evaluation of HgI2 Semiconductor Detector as High Energy X-ray Dosimeter Application
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Choi Il-Hong
Noh Sung-Jin Park Jung-Eun Park Ji-Koon Kang Sang-Sik
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Abstract
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In this paper, for a new detection system development with the better accurate dose evaluation and beam distribution imaging using the small field irradiation of linear accelerator, the compound semiconductor based detection sensors were fabricated and the performance evaluation was investigated. The special particle-in-binder sedimentation was used for a large area film sensor fabrication. The detection properties for high energy x-rays were investigated from a dark current, an output current, a rising time, a falling time, and response delay measurement. The experimental results, the TiO2 mixed HgI2 sensor showed the best electrical characteristics than PbI2, PbO, pure HgI2. Linearity, repeatability, and accuracy tests from LINAC were tested, the TiO2 mixed HgI2 sensor showed the better performance than the commercially available dosimetry devices.
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KEYWORD
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Semiconductor sensor, Linear accelerator, Quality control, Dosimeter
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