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KMID : 0381919950250030082
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Korean Journal of Microscopy
1995 Volume.25 No. 3 p.82 ~ p.89
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Microstructural Observations on Quaternary ZnMgSSe/GaAs Epilayer Grown by MBE
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Lee Hwack-Joo
Ryu Hyun
Park Hae-Sung
Kim Tae-Il
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Abstract
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High resolution transmission electron microscopic observations on quaternary $Zn_{1-x}Mg_{x}S_y$ $S_{1-y}$(x=0.13, y=0.16) on (001) GaAs substrate grown up to $1.2{\mu}m$ with 20nm ZnSe buffer layer at $300^{\circ}C$ by RIBER MBE system which has a single growth chamber were investigated by HRTEM working at 300kV with point resolution of 0.18nm. The ZnSe buffer layer maintains the coherency with the GaAs substrate. The stacking faults had begun at ZnSe buffer/$Zn_{1-x}Mg_{x}S_{y}S_{1-y}$ interface, whose length and spacing became larger than 60nm and wider than 40nm, respectively. The inverse triangular stacking fault was bounded by stacking faults which were formed on {111} planes with different variants. There exists rare stacking faults inside the triangular defect. The epilayer surrounded by the straight stacking faults, which had formed in the same direction, became the columnar structure
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KEYWORD
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Quaternary, active layer, planar defect, molecular beam epitaxy, high resolution TEM image
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